Published Papers and Patents of Richard Vadimsky (Vadim)

 

[32]      “3-D Photolithography,” R. G. Vadimsky, J. Vac. Sci. Technol. B6(6), 2221 (1988). [31] “Electrical Feedthroughs Formed in Si Wafers By Printing Conductive Paste into Laser Drilled Holes,” R. G. Vadimsky, Proc. of Conf. on Thick Film, Atlanta, GA, June 1988.

 

[30]     “Structure and Composition Dependence of the Anisotropy of the Wet Chemical Etching of Germanium-Selenium Films,” E. Ong, K. L. Tai, R. G. Vadimsky, C. T. Kemmerer, and P. M Briedenbough, SPIE 539, Microlithography, 52 (1985).

 

[29]     “’Transparent’ Metals: Preparation and Characterization of Light Transmitting Platinum Films,” A. Heller, D. E. Aspnes, J. D. Porter, T. T. Sheng, and R. G. Vadimsky, J. Phys. Chem. 89, 4444 (1985).

 

[28]      “Highly Transparent Metal Films: Pt on InP,” D. E. Aspnes, A. Heller, J. D. Porter, T. T. Sheng, and R. G. Vadimsky, Proc. of Conf. on Basic Properties of Optical Materials, Gaithersburg, MD, May 1985.

 

[27]      “Germanium-Selenium (Ge-Se) Based Resist Systems for Submicron VLSI Applications,” E. Ong, K. L. Tai, R. G. Vadimsky, and C. T. Kemmerer, SPIE 394, Optical Microlithography, 39 (1983).

 

[26]     “Multilevel Ge-Se Film Based Resist Systems,” K. L. Tai, R. G. Vadimsky, and E. Ong, SPIE 333, Submicron Lithography, 32 (1982).

 

[25]     “Inorganic Resist Systems for VLSI Microlithography,” K. L. Tai, E. Ong, and R. G. Vadimsky, ECS Proc. of Symp. on Inorganic Resists 82-9, 9 (1982).

 

[24]     “Ag2 / Ge-Se Resist Systems,” R. G. Vadimsky, K. L. Tai, and E. Ong, ECS Proc of Symp. on Inorganic Resists 82-9, 37 (1982).

 

[23]      “Model of Image Formation in Ag2 / Ge-Se Resist Systems: Implications for Microlithography,” K. L. Tai, E. Ong, R. G. Vadimsky, C. T. Kemmerer, and P. M. Bridenbaugh, ECS Proc. of Symp. on Inorganic Resists 82-9, 49 (1982).

 

[22]      “Application of Ge-Se as a Deep-UV Resist for Submicron Lithography,” E. Ong, K. L. Tai, R. G. Vadimsky, and C. T. Kemmerer, ESC Proc. of Symp. on Inorganic Resists 82-8, 71 (1982).

 

[21]     “Growth of c-Ag2Se on g-Ge0.1Se0.9 Inorganic Photoresist: The effect of its Thickness on Lithographic Performance,” V. E. Lamberti, S. M. Vincent,

C. T. Kemmerer, and R. G. Vadimsky, ECS Proc. of Symp. on Inorganic Resists 82-9, 191 (1982).

[20]     “Germanium Selenide: A Resist of Low Energy Ion Beam Lithography,” A. Wagner, D. Barr, T. Venkatesan, W. S. Crane, V. e. Lamberti, K L. Tai, and R. G. Vadimsky, J. Vac. Sci, Technol. 19(4), 1363 (1981).

 

[19]      “p-AInP Photocathodes, Solar to Hydrogen Conversion and Improvement of Polycrystalline Films by Reacting Silver with the Grain Boundaries,” A. Heller, R. G. Vadimsky, W. D. Johnston, K. E. Strege, H. J Leamy, and B. Miller, Proc. 15th IEEE Photovoltaic Specialists Conf., IEEE New York, 1422 (1981).

 

[18]      “Efficient Solar to Hydrogen Conversion: 12% Efficient Photoassisted Electrolysis of Water in the p-InP / HCl-KCl / Pt Cell,” A. Heller and R. G. Vadimsky, J. Amer. Chem. Soc. and Phys. Rev. Lett 46, 1153 (1981).

 

[17]     “On the Origin of Intercrystalline Links,” H. D. Keith, F. J. Padden, Jr., and R. G. Vadimsky, J. Polym. Sci., Polym. Phys. Ed. 18, 2307 (1980).

 

[16]     “Submicron Optical Lithography Using and Inorganic Resist / Polymer Bi-Level Scheme,” K. L. Tai, R. G. Vadimsky, C. T. Kemmerer, J. S. Wagner, V. E. Lamberti, and A. G. Timko, J. Vac. Sci. Technol. 17, 1169 (1980).

 

[15]     “Edge-Sharpening Effect in Ag2Se / GeSe Inorganic Resist,” K. L. Tai, R. G. Vadimsky, and V. E. Lamberti, Ext. Abstr., 158th Meeting of the Electrochem. Soc., Hollywood, Fl (1980).

 

[14]      “ Wet Chemical Processing of the Inorganic Resist GexSe(1-x), R. G. Vadimsky and K. L. Tai, Ext. Abstr., 158th Meeting of the Electrochem. Soc., Hollywood, FL (1980).

 

[13]      “Electron Microscopy,” R. G. Vadimsky, in Methods of Experimental Physics, edited by R. A. Fava (Academic Press, New York, (1980), Vol. 16, Part B, p 185.

 

[12]      “A Bi-Level High Resolution Photolithographic Technique for use with Wafers with Stepped and/or Reflecting Surfaces,” K. L. Tai, W. R. Sinclair, R. G. Vadimsky, J. M. Moran, and M. J. Rand¸ J. Vac, Sci Technol. 16, 1977 (1979).

 

[11]     “Output Stability of n-CdSe / Na2S-S-NaOH / C Solar Cells,” A. Heller, G.P. Schwartz, R. G. Vadimsky, S. Menezes, and B. Miller, J. Electrochem. Soc. 125, 1156 (1978).

 

[10]      “CuInS2 Liquid Junction Solar Cells,” M. Robbins, K. J. Bachmann, V. Lamberti, F. A. Thiel, J. Thomson, R. G. Vadimsky, S. Menezes, A. Heller, and B. Miller, J. Electrochem. Soc. 125, 831 (1978).

 

[9]      “Ru and RuO2  as Electrical Contact Materials: Preparation and Environmental Interactions,” R. G. Vadimsky, R. P. Frankenthal, and D. E. Thompson, J. Electrochem. Soc. 126, 2017 (1979).

 

[8]       “Modification of a Field Emission Source SEM for Quantitative X-Ray Microanalysis,” R. G. Vadimsky, Anal. Lett. 9, 521 (1976).

 

[7]        “Lamellar Thickening in Polyethylene Single Crystals Annealed under Low and High Pressure,” R. J. Roe, C. Gieniewski, and R. G. Vadimsky, J. Polym. Sci. Polym. Phys. Ed. 11, 1653 (1973).

 

[6]       “Intercrystalline Links: A Critical Evaluation,” H. D. Keith, F. J. Padden, Jr., and R. G. Vadimsky, J. Appl. Phy. 42, 4585 (1971).

 

[5]       “Consideration of Energy Dissipation for the ‘Strength of Adhesive Joints,” H. E. Bair, S. Matsuoka, R. G. Vadimsky, and T. T. Wang, J. Adhesion 3, 89 (1971).

 

[4]       “Crystallization of Isotactic Polystyrene from Solution,” H. D. Keith, R. G. Vadimsky, and F. J. Padden, Jr., J. Polym. Sci., Part A-2 8, 1687 (1970).

 

[3]        “Electron Microscopic Study of Deformation in Polyethylene,” R. G. Vadimsky, H. D. Keith, and F. J . Padden, Jr., J. Polym. Sci., Part A-2 7, 1367 (1969).

 

[2]        “Further Studies of Intercrystalline Links in Polyethylene,” H. D. Keith, F. J. Padden, Jr, and R. G. Vadimsky, J. Appl. Phys. 37, 4027 (1966).

 

[1]       “Intercrystalline Links in Bulk Polyethylene,” H. D. Keith, F. J. Padden, Jr., and R. G. Vadimsky, Science 150, 1026 (1965), J. Polym. Sci., Part A-2 4, 267 (1966).

 

 

 

PATENTS

 

[4]       4,726,368 (06/30/1981) – Lithographic Process and Resulting Article

 

[3]       4,550,074 (10/29/1985) – Sensitizing Bath for Chalcogenide Resists

 

[2]       4,343,887 (08/10/1982) – Sensitizing Bath for Silver-Containing Resist

 

[1]        4,082,624 (04/04/1978) – Articles Electrodeposited with Ruthenium and Processes and of  Producing Such Articles

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